型号:

IPS050N03L G

RoHS:无铅 / 符合
制造商:Infineon Technologies描述:MOSFET N-CH 30V 50A TO251-3
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IPS050N03L G PDF
产品变化通告 Product Discontinuation 19/Mar/2010
产品目录绘图 Mosfets TO-251(-3), I-PAK
标准包装 1,500
系列 OptiMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 50A
开态Rds(最大)@ Id, Vgs @ 25° C 5 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大) 2.2V @ 250µA
闸电荷(Qg) @ Vgs 31nC @ 10V
输入电容 (Ciss) @ Vds 3200pF @ 15V
功率 - 最大 68W
安装类型 通孔
封装/外壳 TO-251-3 短引线,IPak,TO-251AA
供应商设备封装 PG-TO251-3
包装 管件
其它名称 IPS050N03LGIN
IPS050N03LGXK
SP000264170
SP000810848
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